FDMS8090 mosfet equivalent, mosfet.
* Max rDS(on) = 13 mΩ at VGS = 10 V, ID = 10 A
* Max rDS(on) = 20 mΩ at VGS = 6 V, ID = 8 A
* Low inductance packaging shortens rise/fall times, resulting in
.
* Bridge Topologies
* Synchronous Rectifier Pair
* Motor Drives
Top Pin 1
Bottom S2 S2 S2 G2
D2
D1
Power .
This device includes two fast switching (Qgd minimized) 100V N-Channel MOSFETs in a dual Power 56 (5 mm X 6 mm MLP) package. The package is enhanced for exceptional thermal performance.
Applications
* Bridge Topologies
* Synchronous Rectifier.
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